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  *1 repetitive peak reverse voltage *2 rms voltage *3 continuous reverse voltage *4 maximum forward voltage@i =2.0a f fm201g fm202g fm203g 35 70 140 50 100 200 symbols v rrm (v) v rms v r (v) (v) *1 *2 *3 v f (v) *4 fm204g fm205g 280 420 400 600 1.10 -55 to +150 FM206G fm207g 800 1000 560 700 50 100 200 400 600 800 1000 parameter conditions forward rectified current forward surge current reverse current thermal resistance diode junction capacitance storage temperature see fig.2 8.3ms single half sine-wave superimposed on rate load (jedec methode) f=1mhz and applied 4v dc reverse voltage symbol min. typ. max. unit i o i fsm i r r ja c j t stg a a a o c/w o c pf 2.0 50 5.0 +175 -65 53 v = v t = 25 c r rrm j o v = v t = 100 c r rrm j o junction to ambient 30 125 (c) o operating temperature t, j 0.196(4.9) 0.180(4.5) 0.012(0.3) typ. 0.106(2.7) 0.091(2.3) 0.068(1.7) 0.060(1.5) 0.032 (0.8) typ. 0.032(0.8) typ. fm201g thru fm207g chip silicon rectifiers page 1/2 @ 2010 copyright by american first semiconductor sma package outline dimensions in inches and (millimeters) 2.0a surface mount general purpose rectifiers - 50v-1000v features batch process design, excellent power dissipation offers. better reverse leakage current and thermal resistance. low profile surface mounted application in order to optimize board space. high current capability. lead-free parts meet environmental standards of mil-std-19500 /228 high surge capability. glass passivated chip junction. ? suffix "-h" indicates halogen-free parts, ex. fm201g-h. ? ? ? ? ? ? mechanical data ? ? ? ? ? ? epoxy: ul94-v0 rated flame retardant case : molded plastic, terminals : solder plated, solderable per mil-std-750, method 2026 polarity : indicated by cathode band mounting position : any weight : 0.05 gram do-214ac / sma approximated maximum ratings (at t =25 o c unless otherwise noted)
.1 1.0 10 100 rating and characteristic curves fig.3 - typical reverse characteristics fig.4-maximum non-repetitive forward surge current number of cycles at 60hz peak for waard surge current ,(a) reverse leakage current , ( a)  percentage rated peak reverse voltage 8.3ms single half sine wave jedec method 0 10 20 30 40 50 1 10 50 100 0 20 40 60 80 100 120 140 .1 .01 1 10 100 fig.1-typical forward characteristics instantaneous for ward current ,(a) forward voltage,(v) pulse width 300us 1% duty cycle .6 .8 1.0 1.2 1.4 1.6 1.8 2.0 .01 t =100 c j t =25 c j t =25 c j t =25 c j fig.5-typical junction capacitance reverse voltage,(v) junction cap acitance,(pf) 175 150 125 100 75 50 25 0 .01 .05 .1 .5 1 5 10 50 100 fig.2-typical forward current derating curve average for ward current ,(a) 0.4 0 0.8 1.2 1.6 2.0 2.4 single phase half wave 60hz resistive or inductive load 0 20 40 60 80 100 120 140 160 180 200 ambient temperature,( c) fm201g thru fm207g page 2/2 www.first-semi.com


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